ABSTRACT
This chapter aims to provide High-resolution electron microscopy as a tool for measuring strain in semiconductors and devices at the nanometre scale. Measurements were carried out using the geometric phase technique, including careful calibration of projector lens distortions. The continuous displacement field was calculated using full anisotropic elastic theory. The phase gives the component of the displacement field in a direction perpendicular to the lattice fringes. The major part of the displacements produced by screw components will be invisible as they lie along the dislocation line, the viewing direction. Measurements of displacements can be carried out at the nanometre scale to very high precision using high-resolution electron microscopy coupled with image analysis. Displacements can be measured directly from high-resolution images by calculating the local Fourier components of the lattice fringes.
