ABSTRACT
This chapter shows how finite-element (FE) calculations can take account of various more complex compositional variations in quantum dots (QD). It describes how the resulting strain fields can be studied via the dynamical contrast of transmission electron microscopy plan-view images of QDs. The chapter examines the three types of compositional in-homogeneities: linear, parabolic and elliptic. A FE program has been developed to model strain relaxation in the case of epitaxial QDs with compositional inhomogeneity. The resulting displacement fields are used to calculate the intensity of dynamical plan view Transmission electron microscope images of such QDs. Low dimensional strained quantum structures have attracted much attention because of their electronic properties resulting from the quantum confinement and the alteration of the QD valence bands due to strain. Some more indirect information has been obtained by high-resolution transmission electron microscopy or by scanning tunneling microscopy.
