ABSTRACT
A laterally strain modulated nanostructure containing an InGaAs-single quantum well is overgrown with GaAs or compressively strained InGaP. Vertical carrier confinement is the basis for most optoelectronic devices, since the dimensional reduction opens a wide variety of physical effects that can be exploited. Additionally, a lateral carrier confinement offers another degree of freedom for device design, that is, in laser diodes a higher modal gain and a better thermal stability can be achieved. The vertical layer structure of the samples was grown in a first epitaxial step by metalorganic vapour phase epitaxy using the common precursors trimethylgallium, trimethylindium, arsine and phosphine. The lateral patterning of the GaAs cap layer and the InGaP stressor layer was carried out by holographic photolithography and wet chemical etching. The InGaP stressor layer appears gray showing the trapezoidal grating structure.
