ABSTRACT
This chapter outlines the epitaxial self-assembling of InAs dots on GaAs from the initial formation of the intermixed two-dimensional wetting layer up to the development of the three dimensional quantum dots (3D QDs). It analyses the InAs on GaAs system prepared by molecular beam epitaxy. Subsequent stages of the heteroepitaxial growth have been investigated starting from the initial formation of the strained two-dimensional wetting layer up to the growth of three-dimensional self-assembled quantum dots. The chapter focuses on the structural characterization near the critical thickness and discusses the role of different features that influence the morphology oflnAs quantum dots. The chapter describes the controversial issue of the 3D QD "precursors". Non-contact atomic force microscopy was performed in ultra-high-vacuum and applied ex situ to characterize the surface morphology. The stable size of quantum dots is basically related to a process of self-sizing induced by the balance between strain and bonding energy at the edge of the island.
