ABSTRACT
The chemical composition of InGaAsN/GaAs quantum wells (QW), grown by chemical beam epitaxy (CBE) with different in and N fluxes, has been characterised with Energy Dispersive X-ray and electron energy loss spectrometry (EELS) using a Scanning Transmission Electron Microscopy (STEM). The InGaAsN/GaAs system therefore offers better high temperature operating characteristics, enhanced laser characteristics, and should provide manufacturing and operational advantages associated with GaAs technology. InGaAsN QWs were grown on GaAs(001) in a VG V80H CBE system using triethylgallium and trimethylindium and precracked arsine. The InGaAsN QWs have uniform thickness, with no sign of strain or crystal defects. Identification of exactly what has occurred in our InGaAsN/GaAs QWs will require detailed mapping of both the In and the N distributions, which is the subject of a ongoing ED X/EELS STEM investigation.
