ABSTRACT
The growth of Si on substrates patterned with an oxide mask is of considerable technological importance in the fabrication of low dimensional structures. One of the main issues in this kind of epitaxy is the faceting of the Si layers. The effect of both n-type and p-type doping on the facet formation of selectively grown Si layers, as well as the effect of growth temperature, window orientation and dimensions, was then investigated by cross-section transmission electron microscopy. The facet is a very important issue in selective epitaxial growth. Facet formation makes possible the fabrication of new types of vertical metal-oxide-semiconductor transistors and nanoscale structures on micrometer scale patterns. The selective area diffraction and high resolution transmission electron microscopy lattice image are inserted to reveal the facet orientation. Facet formation and evolution are the result of growth competition among the facets and doping may affect the growth rate relationship between certain facets.
