ABSTRACT
A detailed structural and optical characterisation of InGaN/GaN multiple quantum wells with In content up to 6% is presented. High resolution X-ray diffraction was employed to determine with a good accuracy the In content in the wells. The emission energy in the high injection limit confirmed the quantum confinement in the wells. In comparison with other III-V compounds the presence of a large spontaneous and strain induced polarisation generates strong electric fields in the wells. These fields are responsible of the quantum confined Stark effect, depending on the well thickness and In content, leading to a large red shift of the transition energies with respect to the energy gap of the material. The chapter presents a detailed structural and optical characterisation of InGaN/GaN quantum wells by means of the complementary use of high resolution X-ray diffraction, transmission electron microscopy and cathodoluminescence techniques.
