ABSTRACT
Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy seem to be the most promising methods for carrier profiling in silicon (Si). The SCM spatial resolution on cross-sectioned samples is essentially limited by the tip diameter. The SCM profile obtained in cross section exactly superimposes with the SCM profile measured on bevel, after rescaling the tip excursion axis by the respective geometrical magnification factor. The conversion of the raw SCM data into carrier concentration profiles can be performed by a code which extracts the calibration curve from an extended database of capacitance voltage characteristics obtained by numerically solving the three-dimensional Poisson equation for the microscopic metal-oxide-semiconductor system on which the measurement relies. SCM has been successfully used to image carrier concentration in submicron devices and on nanometer scale structures, in particular we have described a series of experiments to get information on Si self-interstitial diffusion by measuring the diffusion of B delta doping.
