ABSTRACT
A series of SiGe/Si virtual substrate based n-channel Si metal oxide semiconducting field effect transistors (MOSFET) have been analysed using transmission electron microscopy. Strain engineering of alloy semiconductors is being increasing exploited for the fabrication of a variety of electronic device structures. One of the processes necessary for fabricating a MOSFET device is to produce a gate-oxide, which isolates the active channel from the gate electrode. Roughness of the gate-oxide interface is highly detrimental to final device performance due to increased carrier scattering at the location of the boundary. The SiGe virtual substrate was grown by conventional gas-source molecular beam epitaxy with fluxes of disilane and germane at a temperature of 550°C throughout and a pressure in the range of 10·5 - 104 Torr.
