Different praseodymium oxide phases have been obtained by varying oxygen partial pressure during the Metal-organic chemical vapour deposition (MOCVD) process at 750°C on silicon (Si). The structural investigation of the fluorite-related and oxygen-deficient phases resulting from the reduction of higher rare earth oxides has been the focus of intense research. MOCVD has been applied to deposit praseodymium oxide thin films on Si substrates. After cleaning a p-type Si substrate using standard procedure, praseodymium oxide layers were grown in a hot wall MOCVD reactor at 750°C under reduced pressure. The energy-filtered transmission electron microscopy method employs electron energy losses to produce elemental chemical maps. In order to obtain an energy-filtered chemical map, the typical elemental energy loss edge is employed with a post-edge and two pre-edge windows to eliminate the environment and background signals.