ABSTRACT
This chapter presents four different measurements. The first one is obtained during bonding, by monitoring disorientation angles via the identical graduate scales patterned on the two bonded wafers. The second measurement is deduced from the periods of the dislocation networks. The third one is calculated from large angle convergent beam electron diffraction patterns. The last one is realised by X-ray diffraction. The accuracies of the different measurements are compared. New types of substrates, including one grain boundary which has been called a 'surfacial grain boundary', have been developed. In such a substrate, a grain boundary is parallel and close to the surface: the interface and the surface can 'feel each other', that is to say can interact. The accurate orientation between grains in a specific surfacial grain boundary has been measured with four different methods. A good agreement is obtained confirming that the disorientation between grains can be accurately controlled during bonding.
