ABSTRACT
In presented paper the effect of the aging process on the reliability of the optoelectronic memory element composed of two thin films electroluminescent cells (EL1) and two photoconducting elements (PC) was investigated. The photoconducting element was a copper- and chlorine – doped CdS thin film, the electroluminescent cell was a copper-, chlorine-and manganese-doped ZnS phosphor layer, both these elements being evaporated under vacuum. Between the electroluminescent cell (ELi) and photoconducting element (PCi) an optical feedback must occur, on the other hand between the elements EL2 and PC2 such feedback don’t occur. In realized investigations the aging process was carried out in air at room temperature and at relative humidity 60 to 70%. In a PC1-EL1 system with optical feedback the aging process results above all in the decrease of the value of feedback coefficient. If this coefficient will attain too lower value, then the whole system will not fulfil the role of optoelectronic memory element.
