ABSTRACT
Ion implantation is a very powerful tool for synthesis and modification of the solid state low-dimensional and nanoscale composite structures. If the energy of the ion colliding with the surface is sufficient to overcome the repulsive potential barrier created by surface atoms, it will penetrate into the solid state after its first encounter with the surface atom is rejected. Ion implantation of magnetic species into ferroelectric single crystal targets as a radically novel approach to prepare film nanop articulate magnetic-metal ferroelectric oxide composites are presented. An alternative to ultraviolet (UV)- and EUV-lithography is technology self-organisation of nanostructures during ion beam processing, which allows the formation of chaotic and ordered nanostructures directly on the surface of a semiconductor wafer or creates nanomasks for subsequent alloying. In contrast to electron-beam lithography (EBL), the alternative technology of ion beam processing makes it possible to form arrays of nanostructures simultaneously on the entire surface of the semiconductor wafer.
