ABSTRACT
This chapter takes a fundamental process science and modules based approach in describing the state-of-the-art in plasma etch technology. It provides an overview of the relevant plasma physics and chemistry. The primary electron loss mechanisms in plasma etchers include neutralization at the chamber walls and possibly electron attachment to molecules. DC plasma etchers were developed and utilized during early years of plasma etching and they are still viable sources for sputtering applications. Electrode edge electric field enhancement can cause uniformity problems in Inductively coupled plasmas reactors as well, and strategies for alleviating them are similar to those used in capacitively coupled plasma etchers. A gaseous plasma is obtained by ionizing atoms or molecules in the gas, thereby creating a fluid containing ions, electrons, and neutral particles. One unique feature of partially ionized plasmas is that electrons are extremely energetic even though the gas is at sufficiently low temperature.
