ABSTRACT
Electrically active impurity and defect centers can be identified with ultra-sensitivity by analyzing this emission, which is also in the visible light range. X-ray topography refers to a detailed description and mapping of physical features of a crystalline solid, such as a silicon wafer, either throughout the bulk or in the near-surface region, depending on the camera used. When combined with sectioning and chemical etching techniques, it can be used to delineate stacked metal and oxide films and a variety of crystal defects. It is normally configured with an x-ray detector capable of identifying elements of the periodic table in metal films, particles, and generic contamination. A technique that can be used to maximize Total reflection XRF detection sensitivities is the vapor phase decomposition, which concentrates the impurities by chemical evaporation before the analysis. The ability to provide chemical bonding information coupled with quantitative analysis also makes the technique useful for characterizing chemical changes at surfaces due to material processing.
