ABSTRACT
This chapter reviews the physics and optical properties of gallium nitride (GaN)-based self-assembled Quantum dots (QD), which are much less well-known than their II-VI or III-V semiconductor counterparts. It describes the unique physical properties and applications of GaN-based QDs. The chapter explores progresses in the growth of hexagonal and cubic phase GaN self-assembled QDs by molecular beam epitaxy and metal-organic chemical vapor deposition. It discusses the optical properties and carrier dynamics of hexagonal and cubic GaN self-assembled QDs. The chapter provides some growth and application prospects of GaN-based QDs. GaN-based QDs are attractive for both basic physics and novel device applications because they combine many unique features of zero-dimensional QDs and wide bandgap materials. Single QD spectroscopy is a powerful tool for studying the characteristics of a single QD from the ensemble of QDs. The unique properties of QDs as “artificial atoms” have aroused novel opto-electronic applications.
