ABSTRACT
Commercially available power semiconductor devices can be categorized into several basic types such as diodes, thyristors, bipolar junction transistors (BJT), power metal oxide semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT), and gate turn-off thyristors. In addition, there are power integrated circuits (IC) and smart power devices that monolithically integrate power switching devices with logic/analog control, diagnostic, and protective functions. During normal operation of the MOSFET, parasitic BJT is inactive since its base and emitter are shorted by the source metal of the MOSFET. The chapter focuses on the three most commonly used devices in automotive power electronics: diodes, low-voltage power MOSFETs, and high-voltage IGBTs. It discusses power ICs and smart power devices as well as two emerging device technologies: the silicon superjunction power devices and SiC power devices. Diodes are the simplest semiconductor device, comprising of a PN or Schottky junction with two external terminals.
