ABSTRACT
It is often desired to insert microsensors and other MEMS into harsh, e.g., hot or corrosive, environments. Silicon carbide (SiC) offers considerable promise for such applications, because it can be used to fabricate both high-temperature electronics and extremely durable microstructures. One of the attractive characteristics of SiC is the compatibility of its process technologies with those of silicon, which allows for the cofabrication of SiC and silicon MEMS. However, a very important difference in the processing of these semiconductors arises from the chemical inertness of SiC, a characteristic which makes it attractive for use in corrosive environments, but which also causes it to be very difficult to micromachine.
