ABSTRACT
This chapter examines the importance of the gate resistance upon the radio frequency performance of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It presents basic material concerning the MOSFET physical structure and operation, and discusses nonideal effects. The chapter also discusses MOSFET noise sources relevant to radio frequency designs. It deals with a discussion of MOSFET design and physical layout appropriate for radio frequency implementations. The MOSFET gate terminal sits on top of the channel, and is separated from the channel by an insulating layer of silicon dioxide. Dopant atoms that accept electrons from the silicon lattice are also used to alter the electrical characteristics of silicon semiconductors. Modern MOSFETs differ in an important respect from their counterparts developed in the 1960s. When a bias voltage in excess of the threshold voltage is applied to the gate material, a sufficient number of charge carriers are concentrated under the gate oxide such that conduction between the source and drain is possible.
