ABSTRACT
CONTENTS 15.1 Definitions......................................................................................................................... 437 15.2 Introduction ...................................................................................................................... 438 15.3 Physical Models for Dielectric Breakdown.................................................................. 439
15.3.1 Defect Generation Model................................................................................... 439 15.3.2 Thermochemical Model for Breakdown.......................................................... 440 15.3.3 Anode Hole Injection Breakdown Mechanism............................................... 443 15.3.4 Anode Hydrogen Release Breakdown Mechanism....................................... 445 15.3.5 Power Law Model for Breakdown................................................................... 446
15.4 Driving Forces for Defect Generation and Breakdown ............................................. 446 15.4.1 Fluence-Driven Breakdown............................................................................... 446 15.4.2 Gate Voltage-Driven Breakdown ..................................................................... 447 15.4.3 Temperature......................................................................................................... 448
15.5 Statistics for Dielectric Breakdown ............................................................................... 449 15.6 Soft Breakdown and Projecting Circuit Failure .......................................................... 451
15.6.1 Introduction and Physical Explanation ........................................................... 451 15.6.2 Prevalence and Successive Breakdown ........................................................... 453 15.6.3 Progressive Breakdown ..................................................................................... 454
15.7 Dielectric Breakdown in Advanced Gate Dielectric Stacks....................................... 456 15.8 Conclusion ........................................................................................................................ 458 References.................................................................................................................................... 460
The following definitions of terms apply to this chapter:
SILC Stress-induced leakage current (A). Excess leakage current through a gate dielectric generally caused by trap-assisted tunneling.
