ABSTRACT
Semiconductor nanowires, namely, highly anisotropic crystals with diameters of the order of a few tens of nanometers and aspect ratio of 1:100 to 1:1,000, have gained increased scrutiny recently, motivated in part by issues associated with complementary metal-oxide-semiconductor device scaling. Depending on device design and host semiconductor, semiconductor nanowires can potentially serve as high-speed and low-power transistors for high-performance electronics, flexible electronics, and sensors, and can also serve as a test bed to study the electron physics at the nanoscale.
