ABSTRACT
Large field emission (FE) from heavily Si-doped AIN has been reported by Kasu et al [1]· As the Si atomic density (Nsi) increased in the range Nsi < 1021cm'3, the threshold electric field necessary for the FE decreased. They obtained a high FE current density of 0.22 A/cm2 [2]. This value is seven-times larger than diamond’s [3]. For its application, it is important to investigate the structural properties of the heavily Sidoped AIN. In the present work, we found that the heavily Si-doped AIN forms a new nitride solid solution of Af.xSixN ternary alloys. Further, we obtained the lattice constants using X-ray reciprocal lattice map measurement.
