Investigation of DLTS and low-frequency noise behaviour of Ino.49Gao.51P/Ino.22Gao.78As p-HEMT grown by using a compound source MBE J-H Kim, S-J Jo, J- W Kim, P- W Yu and J-I Song

The samples were grown by V80H-10K MBE system equipped with compound source cells for group V sources. Dominant group V sources are dimmers (As2 and P2) generated by thermal decomposition of high-purity granular polycrystalline GaAs and GaP, respectively. The compound source cells utilize a tantalum scavenger that condenses gallium flux generated from GaAs and GaP back to the cell. The GaP thermal decomposition cell is reported to generate a higher P2/P4 ratio (-170) compared with that (-4) of a conventional red phosphorus cracking cell [5].