ABSTRACT
AlGaN/GaN HEMTs are expected to offer superior performance in high-power and high-temperature applications. However there is some concern about the effects of misfit dislocation such as low-frequency noise and frequency dispersion of the drain current. These phenomena limit the performance for application such as nonlinear circuit that have noise upconvertion. Low-frequency noise of other material systems such as AlGaAs/GaAs [1-3] and InAlAs/InGaAs [4-6] have already been reported by various groups. However, only a few studies have been reported for the AlGaN/GaN heterostructures [7-8]. Therefore, it is important to study the low-frequency noise of this material system to fully understand the behavior of the noise.
