ABSTRACT
A high technologic interest is focused nowadays on the development of compound semiconductor based devices. Monolithic integration of compound semiconductors into silicon technology would result in new technologic developments in optoelectronics and microelectronics. The ΕΠ-V compound semiconductors are some of the most studied compound materials due to their applications in fabrication of LED’s, solid state lasers (VCSEL’s), stacked-cascade solar cells, field effect transistors, high frequency electronic devices, etc. The combination of high performance ΙΠ-V compound semiconductor optoelectronic devices with the charge handling functionality of modem silicon circuitry would enable the fabrication of monolithically integrated optical interconnects which will increase considerably the data processing and transmission speed [1]. Silicon is also an ideal
supporting material for GaAs and other ΠΙ-V compound semiconductors due to its superior mechanical strength, low weight, and high thermal conductivity [2].
