ABSTRACT
Intensity oscillation of reflection high-energy electron diffraction (RHEED) during epitaxial growth is of technological importance since it synchronizes with the formation of molecular layers provided that the growth is in the layer-by-layer (LBL) mode [1]. Vice versa, the appearance of RHEED oscillation (RO) during growth has been frequently regarded as an indication of the LBL growth realized. However, compared to the case for the thermal-energy atom scattering (TEAS), the RO is rather insensitive to the multi-layered morphology involved during the growth; the RO persists even at the temperatures where no intensity oscillation of TEAS are detected. [2,3].
