ABSTRACT
Silicon carbide (SiC) is an attractive material for electronic device fabrication, particularly for high-voltage, high-frequency and high-temperature applications because of its large electric breakdown field and high electron mobility. [1,2] It is necessary to establish the precise epitaxial growth processes in the chemical vapor deposition (CVD) system for further advances of the SiC device technologies. [1-5] Moreover, it is essential for the SiC device processing to precisely control the carrier concentrations and the profiles of doped layers during epitaxial growth.
