ABSTRACT
The QW structure was grown by a low-pressure metal-organic chemical vapor deposition (MOCVD) with a vertical reactor. Samples consist of 80 A Gao.62Ino.38As/GaAs triple-QWs grown at 560 °C on a GaAs buffer layer grown at 700 °C to improve the crystal quality. The V/III ratio of GalnAs is 11. The sample is characterized by micro photoluminescence (PL) measurement.
