ABSTRACT
Figure lc shows the RHEED pattern of an InN film grown with the appropriate initial growth processes. A clear streak pattern appears, and simultaneous appearance of patterns with [I 0 T 0] and [ 112 0 ] azimuths do not appear. We found that these initial growth processes improved the crystallinity and produce a very flat surface. Figure 2 shows the XRD w-29 spectrum of this film. Existence of metastable tilted hexagonal phases corresponding to ( 10 T I) was not observed. Existence of other metastable tilted phases was not also observed. Figure 3 shows the result ofXRD pole-figure measurement of this film. Metastable rotation domains do not appear. Therefore, the results obtained by RHEED and XRD measurements show that the initial growth processes effectively suppressed the metastable domains and improved both the crystallinity and the surface flatness . The high-resolution TEM image in Fig. 4a and the selected area diffraction (SAD) pattern in Fig. 4b support the results of the XRD measurements, thus confirming microscopically that this InN film had a well-oriented hexagonal structure. These results show that the appropriate initial growth processes produce single crystalline InN films on Si substrates. Further details about initial growth processes will be reported elsewhere.
