ABSTRACT
To explain described above "anomalous" drift effects, some defect species that are acceptors in the stable state at 300 K but can transform into donors at elevated temperatures should be supposed to exist; these donors must be ionized at drift temperatures and must have higher diffusivity than the acceptors. One can imagine two ways of acceptor/donor transformations: i) the change of the atom position in the crystal lattice; ii) the change of the centre charge from negative to positive due to double ionization. Since in semiconductors, including CdS and CdSe, diffusivity of interstitials is usually much higher than that of sites and vacancies [1,2], in the first case only siteto-interstitial transitions are actual.
