of the radiative life time. In some cases the

Fig. 4a-c shows pressure dependence of the energy of individual InAs/ AlAs and InAs/GaAs QDs for aperture diameters 130 and 50 nm. The dependence can be traced by curves created by bright dashes corresponding to individual QD lines. The pressure dependence of the QD emission energy has linear character, which is agreed well with numerical calculations.