ABSTRACT
References [I] C.L. Gardner: The Quantum Hydrodynamic Model for Semiconductor Devices.
SIAM J. Appl. Math., vol. 54, no 2, pp. 409-427, (1994). [2] A.M.P.J. Hendriks, W. Magnus, and T.G. van de Roer: Accurate Modeling of the
Naoteru Shigekawa and Kenji Shiojima Photonics Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi. Kanagawa, 243-0198 Japan
Abstract. We investigated the relationship between the channel temperature and the negative resistance for AlGaN/GaN HEMTs by means of ~-PL spectroscopy. We found that the negative-resistance characteristics correlate with the channel temperature, irrespective of gate-bias voltages and gate widths of devices. We also analysed the relationship between the channel temperature and the effective gate-bias voltage, and found that the negative resistance is assumed to be due to a decrease in the electron velocity.
