ABSTRACT
The PL intensity and shape is comparable to that of (100) when grown under lowmigration condition, but a notable fact is a blue-shift of the emission peak by about 40nm. By comparing bulk InGaAsP materials grown on (311)B and (100), it was found that this blue-shift is due to a large reduction in In incorporation and a small reduction in As incorporation on the (311 )B surface. It is believed that In tends to desorb from step corners on the (311) surface [10]. Since the strain in the MQWs was small, little piezoelectric effect was expected. A low temperature PL experiment showed no peak shift by changing excitation power, confirming this expectation.
