ABSTRACT
Far-infrared magneto-optical absorption measurements of In-GaAs/InAlAs and InGaSb/InAlSb heterostructures were carried out to investigate the electronic spin states. In photo- and electric field-modulated absorption signal of electrons in InGaAs/InAlAs heterostructures, two dips were observed in the cyclotron resonance positions which are identified as the resonance positions of the spin-up and -down electrons. In InGaSb/InAlSb heterostructure, the effective mass of the electrons can be estimated as 0.0223m0 and nonparabolicity was not observed. Under band-gap excitation, additional peak can be observed at the higher magnetic field of the cyclotron resonance which corresponds to the spin-down state.
