ABSTRACT
Various nanowires such as core-shell, wedge-shaped and rosary-like nanowires were grown from InAs and InSb by a simple vapour-transport method at relatively low temperatures on FlB-Ga-ion-irradiated Si substrates. The nanowires were characterized by SEM and TEM. It was found that a minute amount of Ga atoms might play a crucial role in the InSb and InAs nanowire growth mechanism.
