ABSTRACT
In this paper, Hall and photoluminescence (PL) measurements are combined to investigate the effects of hydrogen passivation on the shallow defects and impurity levels in undoped, metalorganic vapour phase epitaxial GaSb. Passivation of the native acceptor is evident and improvements in both the mobility and carrier concentration are clearly demonstrated. The thermal stability of the hydrogen-defect/impurity complexes is investigated by annealing the layers after hydrogenation. The PL and Hall results reveal a recovery of the electrical activity of the shallow levels for annealing temperatures above 200 °C.
