ABSTRACT
We report here mid-infrared (λ~2 μm) electroluminescence (EL) observed in single AlSb InAsSb AlSb quantum wells grown by LP-MOVPE method. The single AlSb/InAs0.8Sb0.16 quantum wells based on undoped materials with the thickness of 20 nm and 5 nm for the barriers and the narrow-gap layer were obtained on GaSb substrate. EL spectra at room temperature contained two peaks with photon energy at maximum 0.643 eV and 0.694 eV that can be ascribed to radiative transitions between the ground electron level and two hole levels. The spectral position of the EL peaks observed in the experiment is in good agreement with a k×p envelope function calculation in the frame of four-band Kane’s model taking into account the intermixing of s- and p-states in the deep quanturn well. Increase of the emission intensity with temperature increase from 77 to 300 K can be explained by the radiative recombination of total carriers injected in the narrow AlSb/lnAsSb AlSb quantum well due to specific design of the quantum well providing the suppression of Auger-processes at temperatures above 200 K.
