ABSTRACT
We have performed electrical transport measurements on metal organic vapor phase epitaxy grown In1-xGaxN (x = 0, 0.02, 0.08, 0.2, 0.3) films. The electron mobility in In1-xGaxN films decreases as x increases. The density and the resistivity in In1-xGaxN films increase as x increases. The experimental results can be explained qualitatively with the theoretical prediction by Chin et al. for x = 0, 0.02 and 0.08 [1–4]. However, the transport property changed for x = 0.2 and 0.3 and phase separation occurred in the sample. Details are discussed in this paper.
