Hall effect in the variable range hopping regime in CuInSe2

In 3D n-CuInSe₂ samples with dopant concentration below the critical concentration for the metal insulator transition magnetoresistance and Hall effect have been studied in the variable range hopping conduction regime (VRH). The temperature dependence of Hall mobility μ_H at different field values up to 1.5 T is in agreement with the percolation theory of Hall effect in VRH regime.