ABSTRACT
We present x-ray diffraction (XRD) measurements of as-grown and thermally treated (In,Ga)As/GaAs and (In,Ga)(As,N)/GaAs multiple-quantum wells. In case of the (In,Ga)As samples, the XRD curves show a shift of the envelope that can be explained by an indium-gallium interdiffusion across the interfaces. As this shift ceases in case of the (In,Ga)(As,N) samples, we conclude that the incorporation of nitrogen suppresses the indium-gallium interdiffusion. This finding is important for choosing the appropriate indium and nitrogen concentration of (In,Ga)(As,N) lasers emitting above 1.3 μm. We demonstrate the viability of an (In,Ga)(As,N) edge-emitting laser with an emission wavelength of 1.366 μm.
