ABSTRACT
A series of multilayer InGaAs/GaAs heterostructures with selectively doped InAs quantum dots has been fabricated by low temperature (480°C) MOCVD for IR detectors. We have performed the detailed investigation of electron transport, photoluminescence, interband and intraband photoconductivity (PC) in the temperature range 77÷300K. Structures with different times of QD growth demonstrated narrow lateral intraband PC lines from 3 μm to 6 μm. Some structures had multicolour PC due to a bimodal distribution of QD sizes. We have observed difference in the temperature quenching of photoluminescence and photoconductivity in the structures with a high density of QDs that may result from different influence of defects on these two phenomena. The lateral PC signal at the wavelength of 5μm has been observed up to the temperature 200K. A peak responsivity about 80V/W was measured at 100K.
