Terahertz radiation from InAs, InGaAs and InSb excited by femtosecond optical pulses at wavelengths of 800 and 1560 nm

doi:10.1201/9781482269215-63

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Terahertz radiation from InAs, InGaAs and InSb excited by femtosecond optical pulses at wavelengths of 800 and 1560 nm

ABSTRACT

Terahertz (THz) emissions from InAs, InGaAs, and InSb were examined utilizing femtosecond laser pulses of 780 nm and 1560 nm wavelengths. At both excitation wavelengths, the frequency bandwidths of the THz emissions elicited from the emitters were measured and found to be 4 THz.