ABSTRACT
The physical properties of the InAs/GalnSb SL system are described with emphasis on the application for infrared detection. Examples for material optimization using optical methods, such as photoluminescence spectroscopy are given. Recent progress on the passivation of infrared photodiodes is summarized. As an example for the successful application of the material system a fully integrated midinfrared camera equipped with a 256 x 256 focal plane array is presented.
