ABSTRACT
The infrared detection technologies used by Sofradir, based on Mercury Cadmium Tellurium (MCT) material, was currently processed by Liquid Phase Epitaxy (LPE) for mass production. In parallel, Molecular Beam Epitaxy (MBE) on Germanium is now mature for Medium Wave detector production and is more and more used in Sofradir production. Based on MCT grown by MBE, large wafers (4 inches and more) are available on Germanium in France and on silicon in the USA. MBE process on alternative materials like Germanium, are in position to replace CZT homosubstrates for MW detectors and to compete with other material candidates. This enables very larger wafer size (4” and more) with a well-mastered thickness of the sensitive thin film deposition leading to very low cost 2D MCT arrays. In addition multispectral arrays including advanced photodiode technologies are developed thanks to the MBE process. Therefore third generation IR detector studies in progress concern very large format sizes including small pixel pitch and high performance and mainly multi spectral and multi-color FPAs. New development results are presented and future trends are discussed.
