ABSTRACT
Uncooled midwavelength p-i-n infrared photodetectors based on InAs/GaSb superlattice are reported. The active region consists of 250 periods of InAs(lOMLs)/InSb(lML)/GaSb(lOMLs) perfectly lattice-matched to the GaSb substrate. Mesa devices with a cut-off wavelength of 6 μm exhibit at a 4 μm wavelength high absorption coefficient of ∼3000 cm−1. For a reverse bias voltage of 0.4V they have a current density of 20A/cm2 and a photoresponse of 300 mW/A.
