ABSTRACT
Rashba type spin-orbit interaction (RSOI) has been investigated in channels with side-gates made at narrow-gap heterojunction and the possibility to control the RSOI by the side-gate voltage was discussed. The effect of horizontal electric field created by the bias voltage application to the side-gates of the channel was confirmed in the form of minimum spin-orbit coupling constant ( α ) when the two-gate voltages are balanced. This result is qualitatively explained by an electric field analysis calculated based on the three capacitor model for the narrow channels with side gates.
