ABSTRACT
Magneto-quantum transport properties in AlxGaμxAsySbμ v/InAs deep quantum wells (QWs) have been studied under both perpendicular and parallel magnetic fields. The low-field magnetoresistance (MR) data have been explained by the weak localization (WL) using the inelastic and spin-orbit scattering times (q and r,j as parameters; the inferred value of rso from perpendicular MR is ~ 3 ps for the QWs with different width ¿w. The perpendicular MR curves in moderate fields before the appearance of the Shubnikov-de Haas oscillations for different temperatures have been found to cross each other at B C ~ 1\μ, as predicted for the orbital effect on electron-electron interaction in two dimension (2D). We have also observed the quantum Hall effect in high-B and low-T region for Lw = 50 nm, which indicates the strong 2-dimensionality of the electron gas confined within narrow limit near the hetero interface of the QW. In addition, the analysis shows that a small number of holes exist as the minority carriers only partially participating with the quantum Hall effect.
