ABSTRACT
Integration of compound semiconductor (CS) devices with silicon (Si) integrated circuits (ICs) offers an exciting opportunity to meld the advantages of superior electronic and optical properties of III-Vs with the high integration level, low cost, and pervasive infrastructure of Si technologies. Some recent developments, namely, epitaxial growth of GaN on Si substrates, and heterogeneous integration of GaAs, InP, or InSb devices on Si ICs, will soon be coming to fruition. The integration of established technologies, however, carries with them the threat of upsetting ˆnely honed processes, which can compromise reliability. Large bodies of knowledge of reliability of Si and GaAs technologies exist in the literature and, as new generations
CONTENTS
8.1 Introduction ................................................................................................335 8.2 Reliability Deˆned .....................................................................................336 8.3Determination of MTTF ............................................................................ 337 8.4Compound Semiconductor Reliability-Overview .............................347 8.5 Reliability of Gallium Nitride ..................................................................348
