ABSTRACT
Materials with high channel mobility are essential as silicon CMOS technologyapproachesthe30nmnodeandbeyond.III-Vcompoundsemiconductors,withtheirhighmobilityanddriftvelocityunderthein¯uenceoflow electricˆeld,areconsideredthemostpromisingmaterialstorealizenextgenerationnanoelectronicapplications.Table13.1comparesrelevantchannel material properties of Si, Ge, and main III-V semiconductors [Takagi 2008].
