ABSTRACT
After several decades of scaling, Si-based processors are approaching a number of fundamental limitations that can only be addressed by the use of compound semiconductors (CS). To meet increasingly challenging and complex system requirements as well as staying cost effective, it is not enough to use one single semiconductor material system. Therefore, major efforts have been expended in recent years to combine the low cost and well-established Si-based CMOS processing attributes with the superior
CONTENTS
2.1 Introduction .................................................................................................. 51 2.2Lattice Mismatch ..........................................................................................54 2.3Thermal Mismatch ...................................................................................... 59
2.3.1 Stress Calculations and Nanoheteroepitaxy Theory .................. 61 2.3.2 Thermal Expansion Coefˆcients of III-V Materials and
Substrates ..........................................................................................65 2.3.3Strain Calculated from Domain Mismatch Epitaxy ...................66
2.4Lack of Semi-Insulating Si Substrates ....................................................... 69 2.5 Si Diffusion into Compound Semiconductors ......................................... 71 2.6 Light Absorption Issue of Optical Device on Si Substrates ................... 74 2.7 Approaches of III-V Materials Growth on Si Substrates ....................... 76
